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ST2172 Gallium Nitride (GaN) Sputtering Targets
  • Catalog No.ST2172
  • MaterialGaN

Stanford Materials (SMC) produces any diameter in order to provide the most flexibility possible. With the aim of providing the largest range of specifications, we work either undoped or doped Gallium Nitride (GaN) Sputtering Targets.

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sc/1670827188-normal-Gallium Nitride (GaN) Sputtering Targets.jpg

Gallium Nitride (GaN) Sputtering Targets Description

Stanford Materials Corporation (SMC) specializes in the manufacture of multi-component sputtering targets of optical, electronic, piezo and ferroelectric, superconductor and fuel cell materials for researchers everywhere. Our standard Sputtering Targets for thin film are available monoblock or bonded with dimensions and configurations up to 820 mm to work with both older sputtering devices as well as the latest process equipment. All materials provided by SMC are furnished with a Certificate of Analysis stipulating the exact purity and trace elements present in the product.

Gallium Nitride (GaN) Sputtering Targets Specification

Purity 99.9%, 99.95%, 99.99%
Shape Disc Targets, Plate Targets, Column Targets, Step Targets, Custom-made
Size Circular: Diameter < 14inch, Thickness > 1mm; Block: Length < 32inch, Width < 12inch, Thickness > 1mm

 

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